GOFORD GT2K0P20M

GOFORD · FETs & Power MOSFETs · MPN GT2K0P20M

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)70nC
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation138W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)166mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.4nF
Vgs±20V

Technical details

P-Channel 200V 19A 138W Surface Mount TO-263

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