GOFORD GT280N20T

GOFORD · FETs & Power MOSFETs · MPN GT280N20T

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Specifications

Output Capacitance(Coss)180pF
Pd - Power Dissipation176W
Configuration-
Gate Charge(Qg)45nC
Drain to Source Voltage200V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)23mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number1 N-channel
Input Capacitance(Ciss)1.25nF

Technical details

176W 200V 60A 3V 23mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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