GOFORD · FETs & Power MOSFETs · MPN GT1K3P20D5
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 138nC |
| Current - Continuous Drain(Id) | 25A |
| Output Capacitance(Coss) | 150pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 99mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.05nF |
| Vgs | ±20V |
200V 25A 3.5V 160W 99mΩ@10V 1 P-Channel P-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS