GOFORD · FETs & Power MOSFETs · MPN GT1K3P15M
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| Output Capacitance(Coss) | 115pF |
|---|---|
| Pd - Power Dissipation | 116W |
| Configuration | - |
| Drain to Source Voltage | 150V |
| Gate Charge(Qg) | 40nC |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| RDS(on) | 116mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.6nF |
116W 150V 22A 2.6V 116mΩ@10V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS