GOFORD GT1K2P15S

GOFORD · FETs & Power MOSFETs · MPN GT1K2P15S

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)86nC
Output Capacitance(Coss)135pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3W
RDS(on)128mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 P-Channel
Input Capacitance(Ciss)3.275nF
Vgs±20V

Technical details

P-Channel 150V 5A 3W Surface Mount SOP-8

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