GOFORD GT1K2P15M

GOFORD · FETs & Power MOSFETs · MPN GT1K2P15M

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)86nC
Output Capacitance(Coss)131pF
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation138W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)95mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.186nF
Vgs±20V

Technical details

P-Channel 150V 27A 138W Surface Mount TO-263

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