GOFORD GT1K2P15D5

GOFORD · FETs & Power MOSFETs · MPN GT1K2P15D5

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)86nC
Output Capacitance(Coss)141pF
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation138W
RDS(on)91mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)19pF
Number1 P-Channel
Input Capacitance(Ciss)3.213nF
Vgs±20V

Technical details

P-Channel 150V 27A 138W Surface Mount DFN5x6-8L

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