GOFORD · FETs & Power MOSFETs · MPN GT1K2N10I
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| Gate Charge(Qg) | 4.2nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 40pF |
| Current - Continuous Drain(Id) | 3.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 91mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 145pF |
| Vgs | ±20V |
N-Channel 100V 3.3A 1.6W Surface Mount SOT-23