GOFORD · FETs & Power MOSFETs · MPN GT1K2N10H
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| Output Capacitance(Coss) | 40pF |
|---|---|
| Pd - Power Dissipation | 2W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 4.2nC |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 89mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 145pF |
2W 100V 4.5A 1.6V 89mΩ@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS