GOFORD GT180P15M

GOFORD · FETs & Power MOSFETs · MPN GT180P15M

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Specifications

Output Capacitance(Coss)590pF
Pd - Power Dissipation360W
Gate Charge(Qg)135nC
Configuration-
Drain to Source Voltage150V
Current - Continuous Drain(Id)95A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
RDS(on)18.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)17pF
Number1 P-Channel
Input Capacitance(Ciss)10.4nF

Technical details

360W 150V 95A 2.5V 18.5mΩ@10V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS

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