GOFORD · FETs & Power MOSFETs · MPN GT180P10M
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| Gate Charge(Qg) | 92nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 70A |
| Output Capacitance(Coss) | 500pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 210W |
| RDS(on) | 16mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6nF |
| Vgs | ±20V |
P-Channel 100V 70A 210W Surface Mount TO-263