GOFORD GT180P08T

GOFORD · FETs & Power MOSFETs · MPN GT180P08T

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Specifications

Gate Charge(Qg)103nC
Drain to Source Voltage80V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)89A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation245W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)15mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6nF
Vgs±20V

Technical details

P-Channel 80V 89A 245W Through Hole TO-220

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