GOFORD GT180P08M

GOFORD · FETs & Power MOSFETs · MPN GT180P08M

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Specifications

Output Capacitance(Coss)460pF
Pd - Power Dissipation245W
Configuration-
Gate Charge(Qg)62nC
Drain to Source Voltage80V
Current - Continuous Drain(Id)89A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)14mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.012nF

Technical details

P-Channel 80V 356A 245W Surface Mount TO-263

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