GOFORD GT180P08D5

GOFORD · FETs & Power MOSFETs · MPN GT180P08D5

No reviews yet — be the first to review GOFORD GT180P08D5.

Specifications

Output Capacitance(Coss)500pF
Pd - Power Dissipation245W
Configuration-
Gate Charge(Qg)103nC
Drain to Source Voltage80V
Current - Continuous Drain(Id)89A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)15mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6nF

Technical details

P-Channel 80V 89A 245W Surface Mount DFN5x6-8L

Related FETs & Power MOSFETs