GOFORD GT180N12M

GOFORD · FETs & Power MOSFETs · MPN GT180N12M

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)25nC
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation96W
RDS(on)13mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-channel
Input Capacitance(Ciss)1.65nF
Vgs±20V

Technical details

N-Channel 120V 55A 96W Surface Mount TO-263

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