GOFORD GT135N10D3

GOFORD · FETs & Power MOSFETs · MPN GT135N10D3

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Specifications

Gate Charge(Qg)18nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)41A
Output Capacitance(Coss)190pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.05nF
Vgs±20V

Technical details

N-Channel 100V 41A 52W Surface Mount DFN3x3-8L

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