GOFORD GT130N20T

GOFORD · FETs & Power MOSFETs · MPN GT130N20T

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Specifications

Gate Charge(Qg)77nC
Drain to Source Voltage200V
Current - Continuous Drain(Id)90A
Output Capacitance(Coss)336pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.2V
Pd - Power Dissipation250W
RDS(on)9.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)5.86nF
Vgs±20V

Technical details

N-Channel 200V 90A 250W Through Hole TO-220

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