GOFORD GT130N20Q

GOFORD · FETs & Power MOSFETs · MPN GT130N20Q

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Specifications

Output Capacitance(Coss)350pF
Pd - Power Dissipation260W
Gate Charge(Qg)77nC
Configuration-
Drain to Source Voltage200V
Current - Continuous Drain(Id)92A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.2V
RDS(on)9.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)5.9nF

Technical details

260W 200V 92A 3.2V 9.8mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS

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