GOFORD · FETs & Power MOSFETs · MPN GT130N10M
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| Gate Charge(Qg) | 18nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 457pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 73.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 9.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.222nF |
| Vgs | ±20V |
N-Channel 100V 60A 73.5W Surface Mount TO-263