GOFORD GT130N10F

GOFORD · FETs & Power MOSFETs · MPN GT130N10F

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Specifications

Gate Charge(Qg)18nC
Drain to Source Voltage100V
Output Capacitance(Coss)469pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation41.7W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)9.8mΩ
Number1 N-channel
Input Capacitance(Ciss)1.215nF
Vgs±20V

Technical details

N-Channel 100V 45A 41.7W Through Hole TO-220F

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