GOFORD GT130N10D3

GOFORD · FETs & Power MOSFETs · MPN GT130N10D3

No reviews yet — be the first to review GOFORD GT130N10D3.

Specifications

Gate Charge(Qg)18nC
Drain to Source Voltage100V
Output Capacitance(Coss)461pF
Current - Continuous Drain(Id)52A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation71W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)10.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.254nF
Vgs±20V

Technical details

100V 52A 3V 71W 10.6mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs