GOFORD · FETs & Power MOSFETs · MPN GT120N10
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| Gate Charge(Qg) | 100nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 755pF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 220W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.5nF |
| Vgs | ±20V |
N-Channel 100V 150A 220W Through Hole TO-220