GOFORD GT115N15TL

GOFORD · FETs & Power MOSFETs · MPN GT115N15TL

No reviews yet — be the first to review GOFORD GT115N15TL.

Specifications

Output Capacitance(Coss)260pF
Pd - Power Dissipation190W
Configuration-
Gate Charge(Qg)45nC
Drain to Source Voltage150V
Current - Continuous Drain(Id)105A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.1V
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)9.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.3nF

Technical details

190W 150V 105A 3.1V 9.1mΩ@10V 1 N-channel N-Channel TOLL-8L Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs