GOFORD · FETs & Power MOSFETs · MPN GT115N15T
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| Output Capacitance(Coss) | 260pF |
|---|---|
| Pd - Power Dissipation | 179W |
| Configuration | - |
| Gate Charge(Qg) | 45nC |
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 88A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.3nF |
179W 150V 88A 3V 9mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS