GOFORD · FETs & Power MOSFETs · MPN GT110N06SH
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 17nC |
| Output Capacitance(Coss) | 285pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 9.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.05nF |
| Vgs | ±20V |
N-Channel 60V 12A 3W Surface Mount SOP-8