GOFORD · FETs & Power MOSFETs · MPN GT110N06S-BQ
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| Output Capacitance(Coss) | 365pF |
|---|---|
| Pd - Power Dissipation | 3W |
| Configuration | - |
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 24nC |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 8.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.475nF |
N-Channel 60V 14A 3W Surface Mount SOP-8