GOFORD GT110N06S

GOFORD · FETs & Power MOSFETs · MPN GT110N06S

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Specifications

Gate Charge(Qg)24nC
Drain to Source Voltage60V
Output Capacitance(Coss)365pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.475nF
Vgs±20V

Technical details

N-Channel 60V 14A 3W Surface Mount SOP-8

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