GOFORD · FETs & Power MOSFETs · MPN GT110N06M
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| Gate Charge(Qg) | 31nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 52W |
| RDS(on) | 7.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.2nF |
| Vgs | ±20V |
N-Channel 60V 45A 52W Surface Mount TO-263