GOFORD · FETs & Power MOSFETs · MPN GT110N06D3
No reviews yet — be the first to review GOFORD GT110N06D3.
| Gate Charge(Qg) | 24nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 295pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.059nF |
| Vgs | ±20V |
N-Channel 60V 35A 25W Surface Mount DFN3x3-8L