GOFORD · FETs & Power MOSFETs · MPN GT105N10M
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| Gate Charge(Qg) | 16nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 603pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 83W |
| RDS(on) | 9mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.675nF |
| Vgs | ±20V |
100V 60A 83W Surface Mount TO-263