GOFORD · FETs & Power MOSFETs · MPN GT105N10F
No reviews yet — be the first to review GOFORD GT105N10F.
| Gate Charge(Qg) | 33nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 650pF |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
| Vgs | ±20V |
N-Channel 100V 33A 20.8W Through Hole TO-220F