GOFORD · FETs & Power MOSFETs · MPN GT100P10TL
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| Gate Charge(Qg) | 184nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.05nF |
| Current - Continuous Drain(Id) | 185A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 385W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 12.2nF |
| Vgs | ±20V |
100V 185A 3.5V 385W 7.5mΩ@10V 1 P-Channel P-Channel TOLL-8L Single FETs, MOSFETs RoHS