GOFORD GT100P06D5

GOFORD · FETs & Power MOSFETs · MPN GT100P06D5

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)47nC
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)645pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation104W
RDS(on)7.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)32pF
Number1 P-Channel
Input Capacitance(Ciss)3.7nF
Vgs±20V

Technical details

P-Channel 60V 60A 104W Surface Mount DFN5X6-8L

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