GOFORD · FETs & Power MOSFETs · MPN GT100N20TT
No reviews yet — be the first to review GOFORD GT100N20TT.
| Gate Charge(Qg) | 76nC |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 435pF |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 280W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.3nF |
| Vgs | ±20V |
200V 130A 3V 280W 8mΩ@10V 1 N-channel N-Channel TOLT Single FETs, MOSFETs RoHS