GOFORD GT100N12K

GOFORD · FETs & Power MOSFETs · MPN GT100N12K

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Specifications

Gate Charge(Qg)50nC
Drain to Source Voltage120V
Output Capacitance(Coss)329pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)9.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.911nF
Vgs±20V

Technical details

N-Channel 120V 65A 75W Surface Mount TO-252

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