GOFORD GT100N12D5M

GOFORD · FETs & Power MOSFETs · MPN GT100N12D5M

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)52nC
Current - Continuous Drain(Id)70A
Output Capacitance(Coss)355pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.99nF
Vgs±20V

Technical details

N-Channel 120V 70A 100W Surface Mount DFN5X6-8L

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