GOFORD GT100N12D5

GOFORD · FETs & Power MOSFETs · MPN GT100N12D5

No reviews yet — be the first to review GOFORD GT100N12D5.

Specifications

Gate Charge(Qg)50nC
Drain to Source Voltage120V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
Vgs±20V

Technical details

N-Channel 120V 65A 75W Surface Mount DFN5x6-8L

Related FETs & Power MOSFETs