GOFORD GT100N04K

GOFORD · FETs & Power MOSFETs · MPN GT100N04K

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Specifications

Gate Charge(Qg)32nC
Drain to Source Voltage40V
Output Capacitance(Coss)121pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)118pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)644pF
Vgs±20V

Technical details

N-Channel 40V 50A 80W Surface Mount TO-252

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