GOFORD GT100N04D3

GOFORD · FETs & Power MOSFETs · MPN GT100N04D3

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Specifications

Gate Charge(Qg)13nC
Drain to Source Voltage40V
Output Capacitance(Coss)117pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)640pF
Vgs±20V

Technical details

N-Channel 40V 13A 23W Surface Mount DFN3x3-8L

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