GOFORD GT1003A

GOFORD · FETs & Power MOSFETs · MPN GT1003A

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Specifications

Gate Charge(Qg)5nC
Drain to Source Voltage100V
Output Capacitance(Coss)76pF
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)209pF
Vgs±20V

Technical details

N-Channel 100V 3A 1.6W Surface Mount SOT-23-3L

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