GOFORD GT095N10K-BQ

GOFORD · FETs & Power MOSFETs · MPN GT095N10K-BQ

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Specifications

Output Capacitance(Coss)625pF
Pd - Power Dissipation74W
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)54nC
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.66nF

Technical details

N-Channel 100V 55A 74W Surface Mount TO-252

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