GOFORD GT095N10D5

GOFORD · FETs & Power MOSFETs · MPN GT095N10D5

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Specifications

Gate Charge(Qg)33nC
Drain to Source Voltage100V
Output Capacitance(Coss)650pF
Current - Continuous Drain(Id)63A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.6nF
Vgs±20V

Technical details

N-Channel 100V 55A 74W Surface Mount DFN5x6-8L

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