GOFORD · FETs & Power MOSFETs · MPN GT090P08T
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| Output Capacitance(Coss) | 950pF |
|---|---|
| Pd - Power Dissipation | 490W |
| Configuration | - |
| Gate Charge(Qg) | 173nC |
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 178A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 7.7mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 11.5nF |
490W 80V 178A 1.5V 7.7mΩ@10V 1 P-Channel P-Channel TO-220 Single FETs, MOSFETs RoHS