GOFORD GT090P08M

GOFORD · FETs & Power MOSFETs · MPN GT090P08M

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)173nC
Current - Continuous Drain(Id)178A
Output Capacitance(Coss)930pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation490W
Reverse Transfer Capacitance (Crss@Vds)435pF
RDS(on)7.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)11.17nF
Vgs±20V

Technical details

P-Channel 80V 178A Surface Mount TO-263

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