GOFORD GT090N06S

GOFORD · FETs & Power MOSFETs · MPN GT090N06S

No reviews yet — be the first to review GOFORD GT090N06S.

Specifications

Gate Charge(Qg)24nC
Drain to Source Voltage60V
Output Capacitance(Coss)385pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.378nF
Vgs±20V

Technical details

N-Channel 60V 14A 3.1W Surface Mount SOP-8

Related FETs & Power MOSFETs