GOFORD GT090N06K

GOFORD · FETs & Power MOSFETs · MPN GT090N06K

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Specifications

Gate Charge(Qg)22nC
Drain to Source Voltage60V
Output Capacitance(Coss)284pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.088nF
Vgs±20V

Technical details

N-Channel 60V 45A 52W Surface Mount TO-252

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