GOFORD GT090N06D52

GOFORD · FETs & Power MOSFETs · MPN GT090N06D52

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Specifications

Current - Continuous Drain(Id)40A
Pd - Power Dissipation62W
RDS(on)9mΩ@10V
Gate Threshold Voltage (Vgs(th))1.4V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)25pF
Number2 N-Channel
Input Capacitance(Ciss)1.05nF
Gate Charge(Qg)22nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 60V 40A 62W Surface Mount DFN5x6-8

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