GOFORD · FETs & Power MOSFETs · MPN GT088N06T
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| Gate Charge(Qg) | 21nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 297pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 7.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.116nF |
| Vgs | ±20V |
N-Channel 60V 60A 75W Through Hole TO-220