GOFORD GT085N10MH

GOFORD · FETs & Power MOSFETs · MPN GT085N10MH

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Specifications

Gate Charge(Qg)60nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)70A
Output Capacitance(Coss)380pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
Vgs±20V

Technical details

N-Channel 100V 70A 100W Surface Mount TO-263

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