GOFORD · FETs & Power MOSFETs · MPN GT080P08M
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 208nC |
| Output Capacitance(Coss) | 900pF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 490W |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF |
| RDS(on) | 7.7mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 13.5nF |
| Vgs | ±20V |
80V 180A 1.7V 490W 7.7mΩ@10V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS